features low cost diffused junction low leakage low forward voltage drop high current capability and s im ilar s olvents mechanical data case:jedec do--27,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.041 ounces,1.15 grams mounting position: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. erd03 -04 units maximum recurrent peak reverse voltage v rrm 400 v max imum rms v oltage v rms 280 v maximum dc blocking voltage v dc 400 v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 3.0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 typical junction capacitance (note1) c j pf typical thermal resistance (note2) r ja <d operating junction temperature range t j storage temperature range t stg 2. thermal resistance f rom junction to ambient. a 100.0 note: 1. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. -55----+150 -55----+150 20 i r 10.0 35 1.0 140 plast ic silicon rect ifier a 200.0 i fsm 200 d o - 2 7 3.0 ERD03-02---erd03-04 easily cleaned with freon,alcohol,isopropanol i f(av) voltage range: 200 --- 400 v current: 3.0 a 200 erd03 -02 a the plastic material carries u/l recognition 94v-0 dimensions in millimeters diode semiconductor korea www.diode.kr
1 2 4 10 82 100 0 t j =125 8.3ms single half sine-wave 50 100 150 200 75 25 0 50 single phase half wave 60h z resistive or inductive load 1 2 5 3 4 6 100 125 175 150 .1 .2 .4 1 .0 2 4 1 0 2 0 4 0 10 0 1 2 4 10 20 40 60 100 tj=25 f=1mhz amperes junction capacitance,pf amperes amperes fi g. 3 -- forward derati ng curve fi g. 4 -- peak forward surge current nu m be r o f c y c l e s a t 60 h z ERD03-02---erd03-04 i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s r e ve r s e v o l t a g e , v o l t s ambient temperature, fi g. 1 -- typi cal forward characteri sti c fi g. 2 -- typi cal juncti on characteri sti cs average forward current instantaneous forward current peak forward surge current 1 . 0 0.6 . 0 1 0 . 4 0 . 8 0 . 1 1.4 1 . 2 1 . 6 10 1 . 0 t j =25 c pulse width =300us 0 www.diode.kr diode semiconductor korea
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